layers gate

In this work , we have fabricated SiC MOS capacitors by oxidizing SiC substrates with dry Oa to form SiO2 layers as gate insulators and studied the physical and radiation induced properties of the SiOa / SiC interface system .

我们在本论文工作中使用干氧热氧化6H-SiC生长SiO2层作为栅绝缘层，成功的制作出了SiCMOS电容，用以研究SiO2／SiC系统的界面物理性质和辐照特性。

In the past , BARCs have mainly been used in critical layers such as gate and contact layers .

过去，BARCs主要被用于关键图层，例如栅和接触孔图层。

In addition , we measured the in-die overlay on one of the process layers ( Poly Gate ) using a CD-SEM , and compared the results to the optical overlay metrology in the scribe-line .

此外，还利用CD-SEM（线宽-扫描电子显微镜）测量了某个工艺层（PolyGate）上的芯片内Overlay，并与采用分割线方法的光学Overlay测量结果进行了比较。